Driven by new‑energy vehicle power electronics, data‑center power supply and 5G radio‑frequency equipment demands, the global GaN‑related CMP consumables market keeps high‑speed growth in 2026, with market research estimating compound annual growth rate above 25% in the coming five years. For a long time, high‑end GaN CMP pads have been dominated by overseas suppliers, and key polyurethane base materials rely on imports, which brings pressure on cost, delivery cycle and technical support for regional wafer fabs.
Recently, more Asian compound‑semiconductor manufacturers have launched qualification evaluations on domestically‑developed GaN CMP polyurethane pads. In past evaluations, the main gaps of local products lay in batch‑to‑batch consistency: fluctuation of pore distribution and hardness would cause obvious deviation of within‑wafer non‑uniformity between different pad batches, directly affecting final yield. With continuous iteration of polymer synthesis and precision foaming technology, the gap has been narrowed visibly in recent rounds of sample verification.
Field trial results from several pilot production lines show that newly‑optimized domestic polyurethane pads can achieve comparable surface roughness performance after GaN polishing. Nevertheless, long‑term continuous‑run stability still needs further verification under high‑volume production conditions. Many fabs adopt phased‑in qualification: small‑batch trial production first, followed by gradual replacement of imported consumables after accumulating enough run‑time data.
As a polyurethane material supplier serving semiconductor consumable manufacturers, we keep focusing on material‑level R&D for GaN CMP applications. Strict control over raw‑material purity, cross‑linking uniformity and foaming process helps reduce batch deviation. We provide customized polyurethane material indexes according to downstream pad manufacturers' formula requirements, supporting the whole industry chain's progress toward reliable local supply of GaN‑oriented CMP consumables.